Structure and electronic properties of hydrogenated amorphous GaP

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dc.contributor.authorElgun, N
dc.contributor.authorDavis, EA
dc.date.accessioned2019-10-27T18:38:06Z
dc.date.available2019-10-27T18:38:06Z
dc.date.issued2003
dc.departmentEge Üniversitesien_US
dc.description.abstractHydrogenated amorphous GaP films have been prepared by reactive rf sputtering. Infrared spectroscopy, optical transmission and reflection, photothermal deflection spectroscopy and do conductivity have been studied to investigate the local bonding configurations, the optical absorption edges and the temperature dependence of the conductivity as a function of hydrogen content. The results are discussed and compared with the effects of hydrogenation on amorphous Si. (C) 2003 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/S0022-3093(03)00531-3
dc.identifier.endpage233en_US
dc.identifier.issn0022-3093
dc.identifier.issn0022-3093en_US
dc.identifier.issue01.Maren_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage226en_US
dc.identifier.urihttps://doi.org/10.1016/S0022-3093(03)00531-3
dc.identifier.urihttps://hdl.handle.net/11454/36545
dc.identifier.volume330en_US
dc.identifier.wosWOS:000186572600024en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofJournal of Non-Crystalline Solidsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleStructure and electronic properties of hydrogenated amorphous GaPen_US
dc.typeArticleen_US

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