Structure and electronic properties of hydrogenated amorphous GaP
Küçük Resim Yok
Tarih
2003
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Hydrogenated amorphous GaP films have been prepared by reactive rf sputtering. Infrared spectroscopy, optical transmission and reflection, photothermal deflection spectroscopy and do conductivity have been studied to investigate the local bonding configurations, the optical absorption edges and the temperature dependence of the conductivity as a function of hydrogen content. The results are discussed and compared with the effects of hydrogenation on amorphous Si. (C) 2003 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Non-Crystalline Solids
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
330
Sayı
01.Mar
