Effect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performance

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dc.contributor.authorYagmurcukardes, N.
dc.contributor.authorAydin, H.
dc.contributor.authorCan, M.
dc.contributor.authorYanilmaz, A.
dc.contributor.authorMermer, O.
dc.contributor.authorOkur, S.
dc.contributor.authorSelamet, Y.
dc.date.accessioned2019-10-27T22:58:04Z
dc.date.available2019-10-27T22:58:04Z
dc.date.issued2016
dc.departmentEge Üniversitesien_US
dc.description.abstractAu/n-Si/Graphene/Au Schottky diodes were fabricated by transferring atmospheric pressure chemical vapor deposited (APCVD) graphene on silicon substrates. Graphene/n-Si interface properties were improved by using 5-[(3-methylphenyl)(phenyl) amino] isophthalic acid (MePIFA) and 5-(diphenyl) amino] isophthalic acid (DPIFA) aromatic self-assembled monolayer (SAM) molecules. The surface morphologies of modified and non-modified films were investigated by atomic force microscopy and scanning electron microscopy. The surface potential characteristics were obtained by Kelvin-probe force microscopy and found as 0.158 V, 0.188 V and 0,383 V as a result of SAMs modification. The ideality factors of n-Si/Graphene, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes were found as 1.07, 1.13 and 1.15, respectively. Due to the chain length of aromatic organic MePIFA and DPIFA molecules, also the barrier height phi(B) values of the devices were decreased. While the barrier height of n-Si/Graphene diode was obtained as 0.931 eV, n-Si/MePIFA/Graphene and n-Si/DPIFA/Graphene diodes have barrier height of 0.820 and 0.720 eV, respectively. (C) 2016 The Electrochemical Society. All rights reserved.en_US
dc.description.sponsorshipTUBITAK (The Scientific and Technical Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112T946]en_US
dc.description.sponsorshipThis work was supported by TUBITAK (The Scientific and Technical Research Council of Turkey) with project number 112T946. We also thank AQuReC (Applied Quantum Research Center) for Raman measurements.en_US
dc.identifier.doi10.1149/2.0141607jss
dc.identifier.endpageM73en_US
dc.identifier.issn2162-8769
dc.identifier.issn2162-8769en_US
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpageM69en_US
dc.identifier.urihttps://doi.org/10.1149/2.0141607jss
dc.identifier.urihttps://hdl.handle.net/11454/51427
dc.identifier.volume5en_US
dc.identifier.wosWOS:000378840000029en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElectrochemical Soc Incen_US
dc.relation.ispartofEcs Journal of Solid State Science and Technologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleEffect of Aromatic SAMs Molecules on Graphene/Silicon Schottky Diode Performanceen_US
dc.typeArticleen_US

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