Self-assembly monolayer impact on Schottky diode electrical properties

Basit Öğe Kaydı
dc.authorid0000-0002-1696-4379
dc.contributor.authorMutlu, Adem
dc.contributor.authorCan, Mustafa
dc.contributor.authorTozlu, Cem
dc.date.accessioned2025-03-24T13:15:06Z
dc.date.available2025-03-24T13:15:06Z
dc.date.issued2024
dc.departmentEge Üniversitesi, Güneş Enerjisi Enstitüsü
dc.description.abstractThis study examines the electrical and charge transport properties of p-Si/TiO2/self-assembly monolayer (SAM)/ Al type Schottky diodes. The diodes were fabricated by applying the SAM molecule 4 '-[(3-methylphenyl)(phenyl) amino]biphenyl-4-carboxylic acid (CT21) onto titanium dioxide (TiO2) synthesized via the sol-gel method. The key parameters, including the ideality factor (n), series resistance (Rs), and barrier height (& empty;b), were used to assess the impact of CT21 on diode performance. Experimental results revealed that using CT21 at the TiO2/Al interface significantly enhances diode performance. The n decreased from 3.8 in the control diode to 1.9 with CT21. Rs was substantially reduced, and the & empty;b increased. The rectification ratio improved from 1x104 in the control diode to 1.1x105 in the CT21-modified diode. These enhancements, due to the CT21 molecule's ability to reduce interface states (Nss) and improve surface properties, underscore the potential of SAM coatings to open a new window in nanoelectronics with better performance and reliability.
dc.identifier.citationMutlu, A., Can, M., & Tozlu, C. (2025). Self-assembly monolayer impact on schottky diode electrical properties. Physica. B, Condensed Matter, 696, 416686.
dc.identifier.doi10.1016/j.physb.2024.416686
dc.identifier.endpage6
dc.identifier.issn09214526
dc.identifier.issueNov
dc.identifier.scopus2-s2.0-85208194567
dc.identifier.scopusqualityQ2
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1016/j.physb.2024.416686
dc.identifier.urihttps://hdl.handle.net/11454/116891
dc.identifier.volume696
dc.identifier.wosWOS:001353951000001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorMutlu, Adem
dc.institutionauthorid0000-0002-1696-4379
dc.language.isoen
dc.publisherElsevier
dc.relation.ispartofPhysica B: Condensed Matter
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectDensity of states
dc.subjectInterface passivation
dc.subjectSAMs
dc.subjectSchottky diode
dc.subjectSeries resistance
dc.subjectTiO2
dc.titleSelf-assembly monolayer impact on Schottky diode electrical properties
dc.typeArticle

Dosyalar

Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.17 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu