Self-assembly monolayer impact on Schottky diode electrical properties
Küçük Resim Yok
Tarih
2024
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This study examines the electrical and charge transport properties of p-Si/TiO2/self-assembly monolayer (SAM)/ Al type Schottky diodes. The diodes were fabricated by applying the SAM molecule 4 '-[(3-methylphenyl)(phenyl) amino]biphenyl-4-carboxylic acid (CT21) onto titanium dioxide (TiO2) synthesized via the sol-gel method. The key parameters, including the ideality factor (n), series resistance (Rs), and barrier height (& empty;b), were used to assess the impact of CT21 on diode performance. Experimental results revealed that using CT21 at the TiO2/Al interface significantly enhances diode performance. The n decreased from 3.8 in the control diode to 1.9 with CT21. Rs was substantially reduced, and the & empty;b increased. The rectification ratio improved from 1x104 in the control diode to 1.1x105 in the CT21-modified diode. These enhancements, due to the CT21 molecule's ability to reduce interface states (Nss) and improve surface properties, underscore the potential of SAM coatings to open a new window in nanoelectronics with better performance and reliability.
Açıklama
Anahtar Kelimeler
Density of states, Interface passivation, SAMs, Schottky diode, Series resistance, TiO2
Kaynak
Physica B: Condensed Matter
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
696
Sayı
Nov
Künye
Mutlu, A., Can, M., & Tozlu, C. (2025). Self-assembly monolayer impact on schottky diode electrical properties. Physica. B, Condensed Matter, 696, 416686.
