Structural properties of sputtered amorphous Ga1-xPx films

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dc.contributor.authorElgun, N
dc.contributor.authorGurman, SJ
dc.contributor.authorDavis, EA
dc.date.accessioned2019-10-27T18:22:51Z
dc.date.available2019-10-27T18:22:51Z
dc.date.issued2000
dc.departmentEge Üniversitesien_US
dc.description.abstracta-Ga1-xPx (0.5 less than or equal to x less than or equal to 1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements. The results show that the network of the films is chemically ordered over the composition range studied. They also show that excess P atoms are incorporated with fourfold coordination into the network for x < 0.8. This indicates substitutional alloying, which in turn suggests the dopability of the material.en_US
dc.identifier.doi10.1088/0953-8984/12/22/305
dc.identifier.endpage4733en_US
dc.identifier.issn0953-8984
dc.identifier.issn0953-8984en_US
dc.identifier.issue22en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage4723en_US
dc.identifier.urihttps://doi.org/10.1088/0953-8984/12/22/305
dc.identifier.urihttps://hdl.handle.net/11454/36051
dc.identifier.volume12en_US
dc.identifier.wosWOS:000088154000010en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofJournal of Physics-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleStructural properties of sputtered amorphous Ga1-xPx filmsen_US
dc.typeArticleen_US

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