Structural properties of sputtered amorphous Ga1-xPx films
Küçük Resim Yok
Tarih
2000
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
a-Ga1-xPx (0.5 less than or equal to x less than or equal to 1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements. The results show that the network of the films is chemically ordered over the composition range studied. They also show that excess P atoms are incorporated with fourfold coordination into the network for x < 0.8. This indicates substitutional alloying, which in turn suggests the dopability of the material.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Physics-Condensed Matter
WoS Q Değeri
Q1
Scopus Q Değeri
N/A
Cilt
12
Sayı
22
