The Electrical-Resistivity of Polycrystalline Cu/Mn Double-Layered Thin-Films

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dc.contributor.authorArtunc, N
dc.date.accessioned2019-10-27T11:35:47Z
dc.date.available2019-10-27T11:35:47Z
dc.date.issued1993
dc.departmentEge Üniversitesien_US
dc.description.abstractThe dependence of electrical resistivity of Cu/Mn double-layered films, with Cu base layer thicknesses of 16.7-26.5 nm and Mn overlayer thicknesses of 1.5-7.5 nm, on the temperature from 100 to 330 K is studied, The most striking behaviour observed is that the temperature-dependent resistivity of the Cu/Mn films, the Mn overlayers of which have thicknesses greater than 5.0 nm, exhibits a well defined resistivity anomaly, while the resistivity of samples which have thicknesses smaller than 3.5 nm increases linearly with increasing temperature. According to our analysis the deposition of very thin Mn overlayers onto copper base layers causes an increase in the surface scattering of the Cu/Mn double-layered films with respect to those of the uncovered copper base films. No interface scattering could be detected in all the samples studied.en_US
dc.identifier.doi10.1088/0953-8984/5/49/008
dc.identifier.endpage9068en_US
dc.identifier.issn0953-8984
dc.identifier.issue49en_US
dc.identifier.startpage9059en_US
dc.identifier.urihttps://doi.org/10.1088/0953-8984/5/49/008
dc.identifier.urihttps://hdl.handle.net/11454/33783
dc.identifier.volume5en_US
dc.identifier.wosWOS:A1993ML51400008en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofJournal of Physics-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleThe Electrical-Resistivity of Polycrystalline Cu/Mn Double-Layered Thin-Filmsen_US
dc.typeArticleen_US

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