The Electrical-Resistivity of Polycrystalline Cu/Mn Double-Layered Thin-Films
Küçük Resim Yok
Tarih
1993
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Iop Publishing Ltd
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The dependence of electrical resistivity of Cu/Mn double-layered films, with Cu base layer thicknesses of 16.7-26.5 nm and Mn overlayer thicknesses of 1.5-7.5 nm, on the temperature from 100 to 330 K is studied, The most striking behaviour observed is that the temperature-dependent resistivity of the Cu/Mn films, the Mn overlayers of which have thicknesses greater than 5.0 nm, exhibits a well defined resistivity anomaly, while the resistivity of samples which have thicknesses smaller than 3.5 nm increases linearly with increasing temperature. According to our analysis the deposition of very thin Mn overlayers onto copper base layers causes an increase in the surface scattering of the Cu/Mn double-layered films with respect to those of the uncovered copper base films. No interface scattering could be detected in all the samples studied.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Physics-Condensed Matter
WoS Q Değeri
N/A
Scopus Q Değeri
Cilt
5
Sayı
49
