Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs
Küçük Resim Yok
Tarih
2013
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Polish Acad Sciences Inst Physics
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Aland ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. DOT: 10.12693/APhysPolA.123.456
Açıklama
2nd International Congress on Advances in Applied Physics and Materials Science (APMAS) -- APR 26-29, 2012 -- Antalya, TURKEY
Anahtar Kelimeler
Kaynak
Acta Physica Polonica A
WoS Q Değeri
Q4
Scopus Q Değeri
N/A
Cilt
123
Sayı
2
