Optical and microstructural properties of pure and Ru doped SnO2 semiconducting thin films

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dc.contributor.authorMermer, O.
dc.contributor.authorSozbilen, H.
dc.date.accessioned2019-10-27T22:12:34Z
dc.date.available2019-10-27T22:12:34Z
dc.date.issued2014
dc.departmentEge Üniversitesien_US
dc.description.abstractPure and ruthenium (Ru) doped nanostructure SnO2 (Ru-SnO2) semiconductor films were prepared by sot-gel technique on glass substrates. The effect of Ru incorporation on microstructure and optical properties of SnO2 films was investigated. Crystalline structure, orientations, morphological, optical properties of the films were investigated by using XRD, SEM, AFM, VEECO profilometer, and UV spectrophotometer, respectively. The optical band gap, refractive index, extinction coefficient and dielectric constants were calculated by using transmittance and reflectance spectrum of the films. The obtained structural data indicated that all the films possess polycrystalline structure with tetragonal rutile SnO2 and Ru incorporation conducts to significant changes in the microstructure of the SnO2 films. In addition to these, the highest average optical transmittance value was obtained in the visible region for pure SnO2 film. It was found that optical band gap of film was decreased with the increase in Ru doping, and absorption edge shifted to higher wavelengths with incorporation of Ru.en_US
dc.description.sponsorshipScientific Research Project of Ege UniversityEge Universityen_US
dc.description.sponsorshipThis work has been partially supported by Scientific Research Project of Ege University. The author also wants to thank Dr. Mustafa Erol and Dr. Erdal Celik for their characterization support.en_US
dc.identifier.endpage1310en_US
dc.identifier.issn1454-4164
dc.identifier.issn1841-7132
dc.identifier.issn1454-4164en_US
dc.identifier.issn1841-7132en_US
dc.identifier.issue11.Decen_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage1306en_US
dc.identifier.urihttps://hdl.handle.net/11454/49501
dc.identifier.volume16en_US
dc.identifier.wosWOS:000347510000015en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherNatl Inst Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRu doped SnO2en_US
dc.subjectSol-gelen_US
dc.subjectMicrostructural propertiesen_US
dc.subjectOptical bandgapen_US
dc.titleOptical and microstructural properties of pure and Ru doped SnO2 semiconducting thin filmsen_US
dc.typeArticleen_US

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