Improving the Stability of Ink-Jet Printed Red QLEDs By Optimizing The Device Fabrication Process

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dc.authoridSEVIM UNLUTURK, Secil/0000-0001-8300-3837
dc.contributor.authorDiker, Halide
dc.contributor.authorUnluturk, Secil Sevim
dc.contributor.authorOzcelik, Serdar
dc.contributor.authorVarlikli, Canan
dc.date.accessioned2024-08-31T07:50:13Z
dc.date.available2024-08-31T07:50:13Z
dc.date.issued2024
dc.departmentEge Üniversitesien_US
dc.description.abstractRed-light emitting Cadmium Sulfide 0.8 Selenide 0.2 /Zinc Sulfide (CdS (0.8) Se (0.2) /ZnS) based quantum dots (QDs) were synthesized by hot injection method and utilized as the emissive layer in the quantum dot light emitting diode (QLED) with the device structure of Indium Tin Oxide/Poly(3,4-ethylenedioxythiophene): Polystyrene Sulfonate / Polyvinylcarbazole(or Poly(N,N '-bis-4-butylphenyl-N,N '-bisphenyl)benzidin) /QD/ZincOxide/LithiumFluoride/ Aluminum [ ITO/ PEDOT: PSS/ PVK(or p-TPD )/QD/ZnO/LiF/Al]. QD inks were formulated and prepared octane: decane; (1/1, v/v) solvent system and mixed with the nonionic surfactant, TritonX-100, to make the QD inks inkjet printable. In addition to the inkjet printing technique, spin coating was also employed to form the QD emissive layer for comparing device performance. Compared to the p-TPD-based QLED device, the PVK-based device fabricated via spin coating exhibited similar to 6 -fold higher performance in terms of luminance and efficiency values. In the case of using the ink -jet printer, similar to 2 -fold higher maximum luminance value and slightly lower external quantum efficiency at the lower current density region were obtained in the p-TPD-based device. Furthermore, compared to the PVK layer, the p-TPD layer provided higher device stability regardless of the coating method the higher current density regions. We suggest that the coating method applied and the choice of hole transport layer (HTL) materials may control the device parameters.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkiye (TUBITAK) [115F616]en_US
dc.description.sponsorshipWe acknowledge project support from the Scientific and Technological Research Council of Turkiye (TUBITAK) (Project no. 115F616) .en_US
dc.identifier.doi10.37819/nanofab.9.1822
dc.identifier.issn2299-680X
dc.identifier.urihttps://doi.org/10.37819/nanofab.9.1822
dc.identifier.urihttps://hdl.handle.net/11454/105150
dc.identifier.volume9en_US
dc.identifier.wosWOS:001235331700002en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.language.isoenen_US
dc.publisherEurasia Acad Publ Group (Eapg)en_US
dc.relation.ispartofNanofabricationen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.snmz20240831_Uen_US
dc.subjectQuantum Dotsen_US
dc.subjectRed Quantum Dot Light Emitting Diode (Qled)en_US
dc.subjectQd Ink Formulationen_US
dc.subjectInkjet Printingen_US
dc.subjectHole Transport Materialen_US
dc.titleImproving the Stability of Ink-Jet Printed Red QLEDs By Optimizing The Device Fabrication Processen_US
dc.typeArticleen_US

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