Conventional and Inverted UV-PDs Based on Solution Processed PFE:ZnO Active Layer
Küçük Resim Yok
Tarih
2015
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Ieee-Inst Electrical Electronics Engineers Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Solution processed ultraviolet photodetectors with conventional and inverted architectures with active layers composed of poly(9,9-dioctylfluorenyl-2,7-yleneethynylene) (PFE) and zincoxide (ZnO) nanoparticle hybrid are introduced. Under 1 mW/cm(2) illumination intensity at 365 nm wavelength and for -4 V bias and room temperature, the conventional device structure of ITO/PEDOT: PSS/PFE: ZnO/Al and the inverted device structure of ITO/PFE: ZnO/Au are yielded photoresponsivity values of 311 and 244 mA/W, detectivity values of 1.4 x 10(14) and 5.1 x 10(13) cmHz(1/2)W(-1), and external quantum efficiency values of 105.6% and 82.7%, respectively. By annealing the active layer at polymer's glass transition temperature (T-g; 60 degrees C) for 15 min, these values are increased to 375 and 280 mA/W, 1.6 x 10(14) and 5.3 x 10(13) cmHz(1/2)W(-1), 127% and 95%, as in the above order. Performance, stability, and detectivity value differences between conventional and inverted architectures are explained electrically by impedance spectroscopy.
Açıklama
Anahtar Kelimeler
Ultraviolet photodetector, hybrid system, zincoxide nanoparticle, polymer
Kaynak
Ieee Photonics Technology Letters
WoS Q Değeri
Q2
Scopus Q Değeri
Cilt
27
Sayı
5