Mechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin films

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dc.contributor.authorOzdogan, Mehmet
dc.contributor.authorCelebi, Cem
dc.contributor.authorUtlu, Gokhan
dc.date.accessioned2020-12-01T12:02:23Z
dc.date.available2020-12-01T12:02:23Z
dc.date.issued2020
dc.departmentEge Üniversitesien_US
dc.description.abstractSemiconducting Zinc Oxide (ZnO) is ideal candidate for ultraviolet (UV) photodetector due to its promising optoelectronic properties. Photoconductive type ZnO photodetectors, which is fabricated in metal-semiconductor-metal configuration, show mostly very high photoconductivity under UV light, but they are plagued by slow photoresponse time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time. There are also limited studies, which claim that the defect states acting as hole trap centers prolong response time significantly. However, the underlying physical mechanism is still unclear. Here we study the effects of both adsorbates and defect-related states on the photoresponse character of Pulsed Electron Deposited ZnO thin films. in order to distinguish between these two mechanisms, we have compared the time-dependent photoresponse measurements of bare-ZnO and SiO2 encapsulated-ZnO thin film samples taken under UV light and high vacuum. We show that the dominant mechanism of photoresponse in ZnO is the adsorption/desorption of oxygen and water molecules even when the measurement is performed in high vacuum. After the encapsulation of sample surface by a thin SiO2 layer, the adsorption/desorption rates can significantly improve, and the effects of these molecules partially removed.en_US
dc.description.sponsorshipEge University Scientific Research Project (BAP)Ege University [15-FEN-058]en_US
dc.description.sponsorshipThe authors would like to thank Serap Yigen for the encapsulation experiments, and S. Batuhan Kalkan for the experimental setup. Characterizations of samples were conducted in the Center for Materials Research of Izmir Institute of Technology (IYTE-MAM), Ege University Central Research Test & Analysis Laboratory Application & Research Center (EGE-MATAL) and Izmir Katip Celebi University Central Research Lab. A part of this work has been supported by Ege University Scientific Research Project (BAP) with Project No. 15-FEN-058.en_US
dc.identifier.doi10.1016/j.mssp.2019.104863
dc.identifier.issn1369-8001
dc.identifier.issn1873-4081
dc.identifier.issn1369-8001en_US
dc.identifier.issn1873-4081en_US
dc.identifier.scopus2-s2.0-85075526993en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://doi.org/10.1016/j.mssp.2019.104863
dc.identifier.urihttps://hdl.handle.net/11454/62665
dc.identifier.volume107en_US
dc.identifier.wosWOS:000505017100058en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofMaterials Science in Semiconductor Processingen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectZnO thin filmsen_US
dc.subjectPhotoresponseen_US
dc.subjectUltraviolet photodetectoren_US
dc.subjectEncapsulationen_US
dc.subjectDefect statesen_US
dc.subjectAdsorbatesen_US
dc.titleMechanisms behind slow photoresponse character of Pulsed Electron Deposited ZnO thin filmsen_US
dc.typeArticleen_US

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