Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes

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dc.contributor.authorAydin, H.
dc.contributor.authorBacaksiz, C.
dc.contributor.authorYagmurcukardes, N.
dc.contributor.authorKarakaya, C.
dc.contributor.authorMermer, O.
dc.contributor.authorCan, M.
dc.contributor.authorSenger, R. T.
dc.contributor.authorSahin, H.
dc.contributor.authorSelamet, Y.
dc.date.accessioned2019-10-27T10:43:23Z
dc.date.available2019-10-27T10:43:23Z
dc.date.issued2018
dc.departmentEge Üniversitesien_US
dc.description.abstractWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4"bis(diphenylamino)-1, 1':3"-terpheny1-5' carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-y1-1,1':3'1'-terpheny1-5' carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13,1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as n-n interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipTUBITAK (The Scientific and Technical Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112T946]; Bilim Akademisi The Science Academy, Turkey under the BAGEP programen_US
dc.description.sponsorshipThis work was supported by TUBITAK (The Scientific and Technical Research Council of Turkey) with project number 112T946. We also thank AQuReC (Applied Quantum Research Center) for Raman measurements. Computational resources were provided by TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure). H.S. acknowledges support from Bilim Akademisi The Science Academy, Turkey under the BAGEP program.en_US
dc.identifier.doi10.1016/j.apsusc.2017.09.204
dc.identifier.endpage1017en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.issn0169-4332en_US
dc.identifier.issn1873-5584en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1010en_US
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2017.09.204
dc.identifier.urihttps://hdl.handle.net/11454/30765
dc.identifier.volume428en_US
dc.identifier.wosWOS:000415227000128en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectSelf-assembled monolayers (SAMs)en_US
dc.subjectSchottky diodeen_US
dc.titleExperimental and computational investigation of graphene/SAMs/n-Si Schottky diodesen_US
dc.typeArticleen_US

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