Thickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporation

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dc.contributor.authorKinal, S.
dc.contributor.authorUtlu, G.
dc.date.accessioned2020-12-01T12:09:22Z
dc.date.available2020-12-01T12:09:22Z
dc.date.issued2019
dc.departmentEge Üniversitesien_US
dc.description.abstractIn this study, the effects of annealing temperature and thickness on zinc oxide formation in ZnO/glass thin film systems were investigated. For this purpose, ZnO thin films with thicknesses of 150-300 nm were obtained by thermal evaporation and then annealed in a range of 200-400 degrees C in air. the structural, optical, and electrical characterizations of ZnO/glass films were obtained. According to structural investigations, the deposited films contain Zn rich phases due to low oxygen content. By increasing the annealing temperature, the X-ray diffraction intensity of the Zn peaks that belongs to Zn rich phases is decreased and the ZnO phases were starting to form by oxidation at 300 degrees C. After 300 degrees C, polycrystalline ZnO phases are formed in all samples and at 400 degrees C, ZnO films become completely transparent. Scanning electron microscopy and atomic force microscopy analysis show that nanorods are formed on the surface of the ZnO films. It appears that these nanorods exhibit a random distribution and after annealing, columnar ZnO nanostructure growths occur more regularly. the electrical sheet resistances and resistivity analyses indicate that there is a transition from conductive Zn rich phases to semiconductor ZnO phases. This dramatic resistance increase is due to the transition from dark brown Zn rich phases to transparent ZnO phases. Moreover, the optical transmittance increases to up to 85% after annealing. Optical band gap values are calculated as 3.11-3.41 eV from UV-vis transmistance analysis.en_US
dc.description.sponsorshipEge University Scientific Research Project (BAP)Ege University [15-FEN-058]en_US
dc.description.sponsorshipThis work is supported by Ege University Scientific Research Project (BAP) with Grant No. 15-FEN-058.en_US
dc.identifier.doi10.12693/APhysPolA.136.432
dc.identifier.endpage438en_US
dc.identifier.issn0587-4246
dc.identifier.issn1898-794X
dc.identifier.issn0587-4246en_US
dc.identifier.issn1898-794Xen_US
dc.identifier.issue3en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage432en_US
dc.identifier.urihttps://doi.org/10.12693/APhysPolA.136.432
dc.identifier.urihttps://hdl.handle.net/11454/63424
dc.identifier.volume136en_US
dc.identifier.wosWOS:000495445400008en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPolish Acad Sciences Inst Physicsen_US
dc.relation.ispartofActa Physica Polonica Aen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleThickness and Temperature Dependence of ZnO/Glass Thin Film Systems Obtained by Thermal Evaporationen_US
dc.typeArticleen_US

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