SAM-mediated interface engineering for enhanced Schottky diode characteristics

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dc.authorid0000-0002-1696-4379
dc.authorid0000-0003-4192-5512
dc.contributor.authorMutlu, Adem
dc.contributor.authorCan, Mustafa
dc.contributor.authorTozlu, Cem
dc.date.accessioned2025-03-11T07:56:03Z
dc.date.available2025-03-11T07:56:03Z
dc.date.issued2024
dc.departmentEge Üniversitesi, Güneş Enerjisi Enstitüsü, Enerji Teknolojisi Dalı Ana Bilim Dalı
dc.description.abstractMetal/insulator/semiconductor (MIS) contacts play a crucial role in semiconductor device technology, significantly impacting their reliability, stability, and performance. This study delves into the fabrication and characterization of Schottky diodes utilizing self-assembly monolayers (SAMs) on titanium dioxide (TiO2). The diodes were configured as Al/SAMs/TiO2/p-Si and their electrical characteristics were conducted through both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor (n) decreased from 3.3 for TiO2 to 1.95 for TiO2/CT17 and 1.85 for TiO2/CT19. Similarly, the reverse saturation current (I0) decreased from 9.2 x 10-9 A for TiO2 to 4.6 x 10-9 A for TiO2/CT17 and further to 1.1 x 10-9 A for TiO2/CT19. Barrier height (& empty;b) determined by various methods shows the highest values for TiO2/CT19, indicating decreased leakage current. Additionally, rectification ratios significantly improved for SAM-modified diodes, reaching values of 6 x 104 for TiO2/CT19. The integration of SAM molecules significantly reduces interface defects and enhances the electrical properties of Schottky diodes, as evidenced by the distinct capacitance behavior observed across varying frequencies. The capacitance trends in SAM-modified diodes, including the emergence of negative capacitance at high frequencies, highlight the impact of SAM functional groups on interface state dynamics. Furthermore, series resistance (Rs) values showed a decreasing trend with SAM modification, implying enhanced charge transport. This study highlights the potential of SAMs in optimizing Schottky diodes, contributing to the development of the next-generation nanoelectronic devices.
dc.identifier.citationMutlu, A., Can, M., & Tozlu, C. (2024). SAM-mediated interface engineering for enhanced schottky diode characteristics. Journal of Materials Science. Materials in Electronics, 35(36), 2275.
dc.identifier.doi10.1007/s10854-024-14039-5
dc.identifier.endpage14
dc.identifier.issn0957-4522
dc.identifier.issue36
dc.identifier.scopus2-s2.0-85211960591
dc.identifier.scopusqualityQ2
dc.identifier.startpage1
dc.identifier.urihttps://doi.org/10.1007/s10854-024-14039-5
dc.identifier.urihttps://hdl.handle.net/11454/116588
dc.identifier.volume35
dc.identifier.wosWOS:001377257700005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorMutlu, Adem
dc.institutionauthorid0000-0002-1696-4379
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectself-assembled monolayer
dc.subjectlight-emitting-diodes
dc.subjectvoltage i-v
dc.subjectc-v
dc.subjectseries resistance
dc.subjectcapacitance
dc.subjectfrequency
dc.subjectsemiconductor
dc.subjectstates
dc.titleSAM-mediated interface engineering for enhanced Schottky diode characteristics
dc.typeArticle

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