Havare, A. K.Okur, S.Yagmurcukardes, N. T.Can, M.Aydin, H.Seker, M.Demic, S.2019-10-272019-10-2720130587-42460587-4246https://doi.org/10.12693/APhysPolA.123.456https://hdl.handle.net/11454/467542nd International Congress on Advances in Applied Physics and Materials Science (APMAS) -- APR 26-29, 2012 -- Antalya, TURKEYIn order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Aland ITO/SAM/TPD/Al organic Schottky devices were fabricated to obtain current voltage characteristics. From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively. The surface characterizations of modified and unmodified ITO were performed via atomic force microscopy. DOT: 10.12693/APhysPolA.123.456en10.12693/APhysPolA.123.456info:eu-repo/semantics/openAccessArticle1232456458WOS:000317541600099N/AQ4