Artunc, NElgun, NVizir, ABrown, IBo, STarhan, E2019-10-272019-10-2719990254-05840254-0584https://doi.org/10.1016/S0254-0584(99)00087-5https://hdl.handle.net/11454/36297Cr metal ions with doses of 1 x 10(14)-1 x 10(15) ions/cm(2) have been implanted at 125 keV into thin Au films prepared by DC magnetron sputtering. Electron diffraction patterns have revealed that ail the films remain in the f.c.c. structure, indicating the formation of Au-Cr solid solution. The resistivity of the films were studied in the temperature range 100-330 K. The results show increase in the resistivity with respect to the unimplanted him as a result of the implantation. Some samples show two different types of resistivity anomalies, which are attributed to the occurrence of the antiferromagnetically incommensurate spin density wave and commensurate spin density wave structures, (C) 1999 Elsevier Science S.A. All rights reserved.en10.1016/S0254-0584(99)00087-5info:eu-repo/semantics/closedAccessmagnetron sputteringion implantationtransmission electron microscopyCr ion-implanted Au filmsstructural and electrical propertiesElectrical and structural properties of Cr ion-implanted thin Au filmsArticle602182187WOS:000081585900010Q1Q2