Mermer, O.Sozbilen, H.2019-10-272019-10-2720141454-41641841-71321454-41641841-7132https://hdl.handle.net/11454/49501Pure and ruthenium (Ru) doped nanostructure SnO2 (Ru-SnO2) semiconductor films were prepared by sot-gel technique on glass substrates. The effect of Ru incorporation on microstructure and optical properties of SnO2 films was investigated. Crystalline structure, orientations, morphological, optical properties of the films were investigated by using XRD, SEM, AFM, VEECO profilometer, and UV spectrophotometer, respectively. The optical band gap, refractive index, extinction coefficient and dielectric constants were calculated by using transmittance and reflectance spectrum of the films. The obtained structural data indicated that all the films possess polycrystalline structure with tetragonal rutile SnO2 and Ru incorporation conducts to significant changes in the microstructure of the SnO2 films. In addition to these, the highest average optical transmittance value was obtained in the visible region for pure SnO2 film. It was found that optical band gap of film was decreased with the increase in Ru doping, and absorption edge shifted to higher wavelengths with incorporation of Ru.eninfo:eu-repo/semantics/closedAccessRu doped SnO2Sol-gelMicrostructural propertiesOptical bandgapArticle1611.Dec13061310WOS:000347510000015N/AQ4