Aydin, H.Bacaksiz, C.Yagmurcukardes, N.Karakaya, C.Mermer, O.Can, M.Senger, R. T.Sahin, H.Selamet, Y.2019-10-272019-10-2720180169-43321873-55840169-43321873-5584https://doi.org/10.1016/j.apsusc.2017.09.204https://hdl.handle.net/11454/30765We have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4"bis(diphenylamino)-1, 1':3"-terpheny1-5' carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-y1-1,1':3'1'-terpheny1-5' carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current-voltage (I-V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)-V dependences were determined as 2.13,1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (Rs) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as n-n interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode. (C) 2017 Elsevier B.V. All rights reserved.en10.1016/j.apsusc.2017.09.204info:eu-repo/semantics/closedAccessGrapheneSelf-assembled monolayers (SAMs)Schottky diodeArticle42810101017WOS:000415227000128Q1Q1