Influence of grain-boundary and surface scattering on the electrical resistivity of single-layered thin copper films
Küçük Resim Yok
Tarih
1993
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info:eu-repo/semantics/closedAccess
Özet
The resistivity of single-layered thin copper films with thickness of 17-124 nm, is studied as a function of the temperature and grain diameter. The resistivity of both as-deposited and 500 K annealed films is found to increase with decreasing film thickness. Analysis has shown that the grain-boundary scattering is the dominant contribution and the surface scattering cannot be the cause of the excess resistivity of both as-deposited and 500 K annealed films. The average reflection coefficient R of the electrons scattered by the grain boundaries is found to be 0.38 for both as-deposited and 500 K annealed films over the whole temperature and thickness range studied.
Açıklama
Anahtar Kelimeler
Kaynak
Journal of Physics: Condensed Matter
WoS Q Değeri
Scopus Q Değeri
Q2
Cilt
5
Sayı
5
