110K Bi-System Films Prepared By Rf-Magnetron Sputtering With Compound Target
Küçük Resim Yok
Tarih
1991
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Birkhauser Verlag Ag
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The high-Tc Bi-system films (T(c) > 100 K) could be obtained by a conventional method. The films were rf-magnetron sputtered from a compound target which was prepared by the mixture of Bi2O3, CuO, SrCO3, CaCO3 and PbO powders. After annealing, the temperature dependences of the electrical resistivity and the critical current density were measured. These experimental results show that the films have metallic characteristics with T(c)(onset) > 110 K and T(c)(zero) approximately 105 K and they have mainly 110 K phase with small quantity of 80 K phase.
Açıklama
AUTUMN MEETING OF THE SOC-SUISSE-DE-PHYSIQUE -- OCT 03-04, 1990 -- GENEVA, SWITZERLAND
Anahtar Kelimeler
Kaynak
Helvetica Physica Acta
WoS Q Değeri
N/A
Scopus Q Değeri
Cilt
64
Sayı
2
