Growth and characterization of ZnO nanostructures on porous silicon substrates: Effect of solution temperature

ZnO nanostructures were grown on porous silicon (PSi) substrate at different solution temperatures (85-100 degrees C) by using electrodeposition method. Then PSi/ZnO samples were systematically characterized. XRD analysis indicated that crystal quality and polycrystalline nature of ZnO nanostructures increased with temperature. SEM analysis revealed that the structure changed from nanosheets to nanoflowers. Raman and PL analyses proves that the aligned nanostructures exhibited high E-2 (H) mode of hexagonal ZnO in the range of 430-440 cm(-1) and the typical emission peaks in the visible regions. These nanostructures with finely-controlled novel morphologies can be used to fabricate nano-optical devices due to its structural and optical properties.